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Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

The compound α-Ga(2)O(3) is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thi...

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Autores principales: Son, Hoki, Choi, Ye-ji, Hong, Soon-Ku, Park, Ji-Hyeon, Jeon, Dae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8086155/
https://www.ncbi.nlm.nih.gov/pubmed/33953932
http://dx.doi.org/10.1107/S2052252521003389
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author Son, Hoki
Choi, Ye-ji
Hong, Soon-Ku
Park, Ji-Hyeon
Jeon, Dae-Woo
author_facet Son, Hoki
Choi, Ye-ji
Hong, Soon-Ku
Park, Ji-Hyeon
Jeon, Dae-Woo
author_sort Son, Hoki
collection PubMed
description The compound α-Ga(2)O(3) is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thin films because α-Ga(2)O(3) can only grow heteroepitaxially, which results in residual stress generation owing to lattice mismatch and thermal expansion between the substrate and α-Ga(2)O(3). To overcome this, α-Ga(2)O(3) was grown on a conical frustum-patterned sapphire substrate by halide vapor-phase epitaxy. The surface morphology was crack-free and flat. The α-Ga(2)O(3) grown on a frustum-patterned substrate and a conventional sapphire substrate at 500°C exhibited full-width at half-maxima of 961 and 1539 arcsec, respectively, for 10–12 diffraction. For the former substrate, lateral growth on the pattern and threading dislocation bending towards the pattern suppressed the propagation of threading dislocations generated at the interface, which reduced the threading dislocation propagation to the surface by half compared with that on the latter conventional substrate. The results suggest that conical frustum-patterned sapphire substrates have the potential to produce high-quality α-Ga(2)O(3) epilayers.
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spelling pubmed-80861552021-05-04 Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate Son, Hoki Choi, Ye-ji Hong, Soon-Ku Park, Ji-Hyeon Jeon, Dae-Woo IUCrJ Research Papers The compound α-Ga(2)O(3) is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thin films because α-Ga(2)O(3) can only grow heteroepitaxially, which results in residual stress generation owing to lattice mismatch and thermal expansion between the substrate and α-Ga(2)O(3). To overcome this, α-Ga(2)O(3) was grown on a conical frustum-patterned sapphire substrate by halide vapor-phase epitaxy. The surface morphology was crack-free and flat. The α-Ga(2)O(3) grown on a frustum-patterned substrate and a conventional sapphire substrate at 500°C exhibited full-width at half-maxima of 961 and 1539 arcsec, respectively, for 10–12 diffraction. For the former substrate, lateral growth on the pattern and threading dislocation bending towards the pattern suppressed the propagation of threading dislocations generated at the interface, which reduced the threading dislocation propagation to the surface by half compared with that on the latter conventional substrate. The results suggest that conical frustum-patterned sapphire substrates have the potential to produce high-quality α-Ga(2)O(3) epilayers. International Union of Crystallography 2021-04-28 /pmc/articles/PMC8086155/ /pubmed/33953932 http://dx.doi.org/10.1107/S2052252521003389 Text en © Son et al. 2021 https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.
spellingShingle Research Papers
Son, Hoki
Choi, Ye-ji
Hong, Soon-Ku
Park, Ji-Hyeon
Jeon, Dae-Woo
Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
title Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
title_full Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
title_fullStr Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
title_full_unstemmed Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
title_short Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
title_sort reduction of dislocations in α-ga(2)o(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
topic Research Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8086155/
https://www.ncbi.nlm.nih.gov/pubmed/33953932
http://dx.doi.org/10.1107/S2052252521003389
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