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Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
The compound α-Ga(2)O(3) is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thi...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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International Union of Crystallography
2021
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8086155/ https://www.ncbi.nlm.nih.gov/pubmed/33953932 http://dx.doi.org/10.1107/S2052252521003389 |
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author | Son, Hoki Choi, Ye-ji Hong, Soon-Ku Park, Ji-Hyeon Jeon, Dae-Woo |
author_facet | Son, Hoki Choi, Ye-ji Hong, Soon-Ku Park, Ji-Hyeon Jeon, Dae-Woo |
author_sort | Son, Hoki |
collection | PubMed |
description | The compound α-Ga(2)O(3) is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thin films because α-Ga(2)O(3) can only grow heteroepitaxially, which results in residual stress generation owing to lattice mismatch and thermal expansion between the substrate and α-Ga(2)O(3). To overcome this, α-Ga(2)O(3) was grown on a conical frustum-patterned sapphire substrate by halide vapor-phase epitaxy. The surface morphology was crack-free and flat. The α-Ga(2)O(3) grown on a frustum-patterned substrate and a conventional sapphire substrate at 500°C exhibited full-width at half-maxima of 961 and 1539 arcsec, respectively, for 10–12 diffraction. For the former substrate, lateral growth on the pattern and threading dislocation bending towards the pattern suppressed the propagation of threading dislocations generated at the interface, which reduced the threading dislocation propagation to the surface by half compared with that on the latter conventional substrate. The results suggest that conical frustum-patterned sapphire substrates have the potential to produce high-quality α-Ga(2)O(3) epilayers. |
format | Online Article Text |
id | pubmed-8086155 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | International Union of Crystallography |
record_format | MEDLINE/PubMed |
spelling | pubmed-80861552021-05-04 Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate Son, Hoki Choi, Ye-ji Hong, Soon-Ku Park, Ji-Hyeon Jeon, Dae-Woo IUCrJ Research Papers The compound α-Ga(2)O(3) is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thin films because α-Ga(2)O(3) can only grow heteroepitaxially, which results in residual stress generation owing to lattice mismatch and thermal expansion between the substrate and α-Ga(2)O(3). To overcome this, α-Ga(2)O(3) was grown on a conical frustum-patterned sapphire substrate by halide vapor-phase epitaxy. The surface morphology was crack-free and flat. The α-Ga(2)O(3) grown on a frustum-patterned substrate and a conventional sapphire substrate at 500°C exhibited full-width at half-maxima of 961 and 1539 arcsec, respectively, for 10–12 diffraction. For the former substrate, lateral growth on the pattern and threading dislocation bending towards the pattern suppressed the propagation of threading dislocations generated at the interface, which reduced the threading dislocation propagation to the surface by half compared with that on the latter conventional substrate. The results suggest that conical frustum-patterned sapphire substrates have the potential to produce high-quality α-Ga(2)O(3) epilayers. International Union of Crystallography 2021-04-28 /pmc/articles/PMC8086155/ /pubmed/33953932 http://dx.doi.org/10.1107/S2052252521003389 Text en © Son et al. 2021 https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited. |
spellingShingle | Research Papers Son, Hoki Choi, Ye-ji Hong, Soon-Ku Park, Ji-Hyeon Jeon, Dae-Woo Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate |
title | Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate |
title_full | Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate |
title_fullStr | Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate |
title_full_unstemmed | Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate |
title_short | Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate |
title_sort | reduction of dislocations in α-ga(2)o(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate |
topic | Research Papers |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8086155/ https://www.ncbi.nlm.nih.gov/pubmed/33953932 http://dx.doi.org/10.1107/S2052252521003389 |
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