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Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

The compound α-Ga(2)O(3) is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thi...

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Detalles Bibliográficos
Autores principales: Son, Hoki, Choi, Ye-ji, Hong, Soon-Ku, Park, Ji-Hyeon, Jeon, Dae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8086155/
https://www.ncbi.nlm.nih.gov/pubmed/33953932
http://dx.doi.org/10.1107/S2052252521003389

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