The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer

The optoelectronic characteristics of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with quaternary last quantum barrier (QLQB) and step-graded electron blocking layer (EBL) are investigated numerically. The results show that the internal quantum efficiency (IQE) and radiative recomb...

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Detalles Bibliográficos
Autores principales: Jamil, Tariq, Usman, Muhammad, Malik, Shahzeb, Jamal, Habibullah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8095219/
https://www.ncbi.nlm.nih.gov/pubmed/33967404
http://dx.doi.org/10.1007/s00339-021-04559-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8095219/
https://www.ncbi.nlm.nih.gov/pubmed/33967404
http://dx.doi.org/10.1007/s00339-021-04559-w

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