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The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer

The optoelectronic characteristics of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with quaternary last quantum barrier (QLQB) and step-graded electron blocking layer (EBL) are investigated numerically. The results show that the internal quantum efficiency (IQE) and radiative recomb...

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Detalles Bibliográficos
Autores principales:	Jamil, Tariq, Usman, Muhammad, Malik, Shahzeb, Jamal, Habibullah
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer Berlin Heidelberg 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8095219/ https://www.ncbi.nlm.nih.gov/pubmed/33967404 http://dx.doi.org/10.1007/s00339-021-04559-w

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