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Multi-level characteristics of TiO(x) transparent non-volatile resistive switching device by embedding SiO(2) nanoparticles
TiO(x)-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8110581/ https://www.ncbi.nlm.nih.gov/pubmed/33972612 http://dx.doi.org/10.1038/s41598-021-89315-z |