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Multi-level characteristics of TiO(x) transparent non-volatile resistive switching device by embedding SiO(2) nanoparticles

TiO(x)-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device...

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Detalles Bibliográficos
Autores principales:	Kwon, Sera, Kim, Min-Jung, Chung, Kwun-Bum
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8110581/ https://www.ncbi.nlm.nih.gov/pubmed/33972612 http://dx.doi.org/10.1038/s41598-021-89315-z

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