Sensitivity of Field-Effect Transistor-Based Terahertz Detectors

This paper presents an overview of the different methods used for sensitivity (i.e., responsivity and noise equivalent power) determination of state-of-the-art field-effect transistor-based THz detectors/sensors. We point out that the reported result may depend very much on the method used to determ...

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Detalles Bibliográficos
Autores principales: Javadi, Elham, But, Dmytro B., Ikamas, Kęstutis, Zdanevičius, Justinas, Knap, Wojciech, Lisauskas, Alvydas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8122696/
https://www.ncbi.nlm.nih.gov/pubmed/33919219
http://dx.doi.org/10.3390/s21092909

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8122696/
https://www.ncbi.nlm.nih.gov/pubmed/33919219
http://dx.doi.org/10.3390/s21092909

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