Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes

We fabricated the photonic-crystal-structured p-GaN (PC-structured p-GaN) nanorods using the modified polystyrene nanosphere (PS NS) lithography method for InGaN/GaN green light-emitting diodes (LEDs) to enhance the light extraction efficiency (LEE). A modified PS NS lithography method including two...

Descripción completa

Detalles Bibliográficos
Autores principales: Lei, Po-Hsun, Yang, Po-Chun, Huang, Po-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8123327/
https://www.ncbi.nlm.nih.gov/pubmed/33922982
http://dx.doi.org/10.3390/ma14092200

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8123327/
https://www.ncbi.nlm.nih.gov/pubmed/33922982
http://dx.doi.org/10.3390/ma14092200

Ejemplares similares