Structural Characterization of Al(0.37)In(0.63)N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Compact Al(0.37)In(0.63)N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an i...

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Detalles Bibliográficos
Autores principales: Núñez-Cascajero, Arántzazu, Naranjo, Fernando B., de la Mata, María, Molina, Sergio I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8123643/
https://www.ncbi.nlm.nih.gov/pubmed/33925320
http://dx.doi.org/10.3390/ma14092236

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8123643/
https://www.ncbi.nlm.nih.gov/pubmed/33925320
http://dx.doi.org/10.3390/ma14092236

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