Unified Model for Laser Doping of Silicon from Precursors

Laser doping of silicon with the help of precursors is well established in photovoltaics. Upon illumination with the constant or pulsed laser beam, the silicon melts and doping atoms from the doping precursor diffuse into the melted silicon. With the proper laser parameters, after resolidification,...

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Detalles Bibliográficos
Autores principales: Hassan, Mohamed, Dahlinger, Morris, Köhler, Jürgen R., Zapf-Gottwick, Renate, Werner, Jürgen H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8124229/
https://www.ncbi.nlm.nih.gov/pubmed/33947085
http://dx.doi.org/10.3390/ma14092322

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8124229/
https://www.ncbi.nlm.nih.gov/pubmed/33947085
http://dx.doi.org/10.3390/ma14092322

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