Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of re...

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Detalles Bibliográficos
Autores principales: Mukherjee, Kalparupa, De Santi, Carlo, Borga, Matteo, Geens, Karen, You, Shuzhen, Bakeroot, Benoit, Decoutere, Stefaan, Diehle, Patrick, Hübner, Susanne, Altmann, Frank, Buffolo, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8124824/
https://www.ncbi.nlm.nih.gov/pubmed/33946943
http://dx.doi.org/10.3390/ma14092316

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8124824/
https://www.ncbi.nlm.nih.gov/pubmed/33946943
http://dx.doi.org/10.3390/ma14092316

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