Parasitic Current Induced by Gate Overlap in Thin-Film Transistors

As novel applications of oxide semiconductors are realized, various structural devices and integrated circuits are being proposed, and the gate-overlay defect phenomenon is becoming more diverse in its effects. Herein, the electrical properties of the transistor that depend on the geometry between t...

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Detalles Bibliográficos
Autores principales: Lee, Hyeon-Jun, Abe, Katsumi, Kim, June-Seo, Yun, Won Seok, Lee, Myoung-Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8125210/
https://www.ncbi.nlm.nih.gov/pubmed/33946711
http://dx.doi.org/10.3390/ma14092299

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8125210/
https://www.ncbi.nlm.nih.gov/pubmed/33946711
http://dx.doi.org/10.3390/ma14092299

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