Remote Doping Effects of Indium–Gallium–Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers

Oxide thin-film transistors (TFTs), including indium–gallium–zinc oxide (IGZO) TFTs, have been widely investigated because of their excellent properties, such as compatibility with flexible substrates, high carrier mobility, and easy-to-fabricate TFT processes. However, to increase the use of oxide...

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Detalles Bibliográficos
Autores principales: Seo, Juhyung, Yoo, Hocheon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8145249/
https://www.ncbi.nlm.nih.gov/pubmed/33922430
http://dx.doi.org/10.3390/mi12050481

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8145249/
https://www.ncbi.nlm.nih.gov/pubmed/33922430
http://dx.doi.org/10.3390/mi12050481

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