Deposition and Characterization of RP-ALD SiO(2) Thin Films with Different Oxygen Plasma Powers

In this study, silicon oxide (SiO(2)) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO(2) films. Post-annealing was performed in the air at diff...

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Detalles Bibliográficos
Autores principales: Zhang, Xiao-Ying, Yang, Yue, Zhang, Zhi-Xuan, Geng, Xin-Peng, Hsu, Chia-Hsun, Wu, Wan-Yu, Lien, Shui-Yang, Zhu, Wen-Zhang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8145387/
https://www.ncbi.nlm.nih.gov/pubmed/33947065
http://dx.doi.org/10.3390/nano11051173

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8145387/
https://www.ncbi.nlm.nih.gov/pubmed/33947065
http://dx.doi.org/10.3390/nano11051173

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