High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrat...

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Detalles Bibliográficos
Autores principales: Zhao, Xuewei, Wang, Guilei, Lin, Hongxiao, Du, Yong, Luo, Xue, Kong, Zhenzhen, Su, Jiale, Li, Junjie, Xiong, Wenjuan, Miao, Yuanhao, Li, Haiou, Guo, Guoping, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8145456/
https://www.ncbi.nlm.nih.gov/pubmed/33925305
http://dx.doi.org/10.3390/nano11051125

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8145456/
https://www.ncbi.nlm.nih.gov/pubmed/33925305
http://dx.doi.org/10.3390/nano11051125

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