A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-s...

Descripción completa

Detalles Bibliográficos
Autores principales: Kaufmann, Ivan Rodrigo, Zerey, Onur, Meyers, Thorsten, Reker, Julia, Vidor, Fábio, Hilleringmann, Ulrich
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146060/
https://www.ncbi.nlm.nih.gov/pubmed/33946278
http://dx.doi.org/10.3390/nano11051188

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146060/
https://www.ncbi.nlm.nih.gov/pubmed/33946278
http://dx.doi.org/10.3390/nano11051188

Ejemplares similares