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A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application
Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-s...
Autores principales: | Kaufmann, Ivan Rodrigo, Zerey, Onur, Meyers, Thorsten, Reker, Julia, Vidor, Fábio, Hilleringmann, Ulrich |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146060/ https://www.ncbi.nlm.nih.gov/pubmed/33946278 http://dx.doi.org/10.3390/nano11051188 |
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