High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-...

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Detalles Bibliográficos
Autores principales: Naqi, Muhammad, Kwon, Nayoung, Jung, Sung Hyeon, Pujar, Pavan, Cho, Hae Won, Cho, Yong In, Cho, Hyung Koun, Lim, Byungkwon, Kim, Sunkook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146410/
https://www.ncbi.nlm.nih.gov/pubmed/33923237
http://dx.doi.org/10.3390/nano11051101

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146410/
https://www.ncbi.nlm.nih.gov/pubmed/33923237
http://dx.doi.org/10.3390/nano11051101

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