High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobil...

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Detalles Bibliográficos
Autores principales: Huang, Yu-Chun, Chiu, Hsien-Chin, Kao, Hsuan-Ling, Wang, Hsiang-Chun, Liu, Chia-Hao, Huang, Chong-Rong, Chen, Si-Wen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8147309/
https://www.ncbi.nlm.nih.gov/pubmed/34062908
http://dx.doi.org/10.3390/mi12050509

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8147309/
https://www.ncbi.nlm.nih.gov/pubmed/34062908
http://dx.doi.org/10.3390/mi12050509

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