An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-...

Descripción completa

Detalles Bibliográficos
Autores principales: Alim, Mohammad Abdul, Gaquiere, Christophe, Crupi, Giovanni
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8150306/
https://www.ncbi.nlm.nih.gov/pubmed/34065962
http://dx.doi.org/10.3390/mi12050549

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8150306/
https://www.ncbi.nlm.nih.gov/pubmed/34065962
http://dx.doi.org/10.3390/mi12050549

Ejemplares similares