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Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature
AlGaN/GaN HEMT hydrogen gas sensors were optimized by AlGaN barrier thickness in the gate-source connected configuration demonstrated high response and robust stability up to 500 °C. First, we found that the hydrogen sensing performance of a conventional normally-on HEMT-based sensor was enhanced wh...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8150832/ https://www.ncbi.nlm.nih.gov/pubmed/34068454 http://dx.doi.org/10.3390/mi12050537 |