Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candida...

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Detalles Bibliográficos
Autores principales: Bian, Zhongjian, Hong, Xiaofeng, Guo, Yanan, Naviner, Lirida, Ge, Wei, Cai, Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8151166/
https://www.ncbi.nlm.nih.gov/pubmed/34066185
http://dx.doi.org/10.3390/mi12050551

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8151166/
https://www.ncbi.nlm.nih.gov/pubmed/34066185
http://dx.doi.org/10.3390/mi12050551

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