Characteristics and Electronic Band Alignment of a Transparent p-CuI/n-SiZnSnO Heterojunction Diode with a High Rectification Ratio

Transparent p-CuI/n-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented p-CuI polycrystalline film on top of an amorphous n-SZTO film grown by the RF magnetron sputtering method. A nitrogen annealing process reduces ionized impurity scattering...

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Detalles Bibliográficos
Autores principales: Lee, Jeong Hyuk, Lee, Byeong Hyeon, Kang, Jeonghun, Diware, Mangesh, Jeon, Kiseok, Jeong, Chaehwan, Lee, Sang Yeol, Kim, Kee Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8151173/
https://www.ncbi.nlm.nih.gov/pubmed/34067221
http://dx.doi.org/10.3390/nano11051237

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8151173/
https://www.ncbi.nlm.nih.gov/pubmed/34067221
http://dx.doi.org/10.3390/nano11051237

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