Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes

An environment-friendly inverted indium phosphide red quantum dot light-emitting diode (InP QLED) was fabricated using Mg-doped zinc oxide (ZnMgO) as the electron transport layer (ETL). The effects of ZnMgO ETL on the performance of InP QLED were investigated. X-ray diffraction (XRD) analysis indica...

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Detalles Bibliográficos
Autores principales: Zhang, Binbin, Luo, Yu, Mai, Chaohuang, Mu, Lan, Li, Miaozi, Wang, Junjie, Xu, Wei, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8151885/
https://www.ncbi.nlm.nih.gov/pubmed/34065118
http://dx.doi.org/10.3390/nano11051246

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8151885/
https://www.ncbi.nlm.nih.gov/pubmed/34065118
http://dx.doi.org/10.3390/nano11051246

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