Stretching the Equilibrium Limit of Sn in Ge(1–x)Sn(x) Nanowires: Implications for Field Effect Transistors

[Image: see text] Ge(1–x)Sn(x) nanowires incorporating a large amount of Sn would be useful for mobility enhancement in nanoelectronic devices, a definitive transition to a direct bandgap for application in optoelectronic devices and to increase the efficiency of the GeSn-based photonic devices. Her...

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Detalles Bibliográficos
Autores principales: Biswas, Subhajit, Doherty, Jessica, Galluccio, Emmanuele, Manning, Hugh G., Conroy, Michele, Duffy, Ray, Bangert, Ursel, Boland, John J., Holmes, Justin D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8153542/
https://www.ncbi.nlm.nih.gov/pubmed/34056558
http://dx.doi.org/10.1021/acsanm.0c02569

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8153542/
https://www.ncbi.nlm.nih.gov/pubmed/34056558
http://dx.doi.org/10.1021/acsanm.0c02569

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