Stability-Enhanced Resistive Random-Access Memory via Stacked In(x)Ga(1–x)O by the RF Sputtering Method

[Image: see text] The stability of a resistive random-access memory (RRAM) device over long-term use has been widely acknowledged as a pertinent concern. For investigating the stability of RRAM devices, a stacked In(x)Ga(1–x)O structure is designed as its switching layer in this study. Each stacked...

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Detalles Bibliográficos
Autores principales: Huang, Wei-Lun, Lin, Yong-Zhe, Chang, Sheng-Po, Lai, Wei-Chih, Chang, Shoou-Jinn
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8153763/
https://www.ncbi.nlm.nih.gov/pubmed/34056222
http://dx.doi.org/10.1021/acsomega.1c00112

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8153763/
https://www.ncbi.nlm.nih.gov/pubmed/34056222
http://dx.doi.org/10.1021/acsomega.1c00112

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