Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide Ge(x)As(y)Se(1−x−y) Thin Films by In Situ Measurements

To understand the effects of thermal annealing on the structure of Ge(x)As(y)Se(1−x−y) thin films, the thermal evolution of these films was measured by the in situ X-ray diffraction (XRD) at different temperature (773 K or 1073 K) in a vacuum (10(−1) Pa) environment. The entire process of crystalliz...

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Detalles Bibliográficos
Autores principales: Su, Xueqiong, Pan, Yong, Gao, Dongwen, Li, Shufeng, Wang, Jin, Wang, Rongping, Wang, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8156157/
https://www.ncbi.nlm.nih.gov/pubmed/34063433
http://dx.doi.org/10.3390/ma14102572

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8156157/
https://www.ncbi.nlm.nih.gov/pubmed/34063433
http://dx.doi.org/10.3390/ma14102572

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