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Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide Ge(x)As(y)Se(1−x−y) Thin Films by In Situ Measurements
To understand the effects of thermal annealing on the structure of Ge(x)As(y)Se(1−x−y) thin films, the thermal evolution of these films was measured by the in situ X-ray diffraction (XRD) at different temperature (773 K or 1073 K) in a vacuum (10(−1) Pa) environment. The entire process of crystalliz...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8156157/ https://www.ncbi.nlm.nih.gov/pubmed/34063433 http://dx.doi.org/10.3390/ma14102572 |