Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC

Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the dislocation densities together with the defect cor...

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Detalles Bibliográficos
Autores principales: Serban, Andreea Bianca, Ene, Vladimir Lucian, Dinescu, Doru, Zai, Iulia, Djourelov, Nikolay, Vasile, Bogdan Stefan, Leca, Victor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8156561/
https://www.ncbi.nlm.nih.gov/pubmed/34069169
http://dx.doi.org/10.3390/nano11051299

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8156561/
https://www.ncbi.nlm.nih.gov/pubmed/34069169
http://dx.doi.org/10.3390/nano11051299

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