Cargando…

Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC

Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the dislocation densities together with the defect cor...

Descripción completa

Detalles Bibliográficos
Autores principales:	Serban, Andreea Bianca, Ene, Vladimir Lucian, Dinescu, Doru, Zai, Iulia, Djourelov, Nikolay, Vasile, Bogdan Stefan, Leca, Victor
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8156561/ https://www.ncbi.nlm.nih.gov/pubmed/34069169 http://dx.doi.org/10.3390/nano11051299

Ejemplares similares

Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments
por: Ene, Vladimir Lucian, et al.
Publicado: (2020)

Study of Edge and Screw Dislocation Density in GaN/Al(2)O(3) Heterostructure
por: Ene, Vladimir Lucian, et al.
Publicado: (2019)

Ground-State Structure of Quaternary Alloys (SiC)(1−x) (AlN)(x) and (SiC)(1−x) (GaN)(x)
por: Menad, Abdelkader, et al.
Publicado: (2023)

Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization
por: Nagata, Takahiro, et al.
Publicado: (2022)

Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
por: Wu, Jinxing, et al.
Publicado: (2020)

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)
por: Abe, Shunsuke, et al.
Publicado: (2010)

AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
por: Tamura, Yosuke, et al.
Publicado: (2015)

Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor
por: Mu, Fengwen, et al.
Publicado: (2019)

AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
por: Kao, Wei-Chung, et al.
Publicado: (2019)

Vertical GaN and SiC power devices
por: Mochizuki, Kazuhiro
Publicado: (2018)

Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC
por: Kim, Dong-Hyeon, et al.
Publicado: (2021)

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
por: Zhong, Aihua, et al.
Publicado: (2012)

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
por: Harrouche, Kathia, et al.
Publicado: (2023)

Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer
por: Kukushkin, Sergey A., et al.
Publicado: (2020)

Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes
por: Kim, Dong-Hyeon, et al.
Publicado: (2020)

Ion implantation of Cd and Ag into AlN and GaN
por: Miranda, Sérgio M C, et al.
Publicado: (2012)

AlN formation by an Al/GaN substitution reaction
por: Noorprajuda, Marsetio, et al.
Publicado: (2020)

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
por: Sang, Ling, et al.
Publicado: (2014)

Direct growth of freestanding GaN on C-face SiC by HVPE
por: Tian, Yuan, et al.
Publicado: (2015)

Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes
por: Yu, Ye, et al.
Publicado: (2021)

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
por: Yu, Ing-Song, et al.
Publicado: (2014)

The Features of Phase Stability of GaN and AlN Films at Nanolevel
por: Chepkasov, Ilya V., et al.
Publicado: (2020)

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures
por: Wang, Wenliang, et al.
Publicado: (2015)

Intentional polarity conversion of AlN epitaxial layers by oxygen
por: Stolyarchuk, N., et al.
Publicado: (2018)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
por: Liu, Ting, et al.
Publicado: (2016)

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
por: Zhang, Lei, et al.
Publicado: (2014)

Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
por: Kim, Hogyoung, et al.
Publicado: (2018)

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition
por: Wang, Wenliang, et al.
Publicado: (2015)

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
por: Bolshakov, Alexey D, et al.
Publicado: (2018)

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
por: Jorudas, Justinas, et al.
Publicado: (2020)

Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer
por: Mansor, Marwan, et al.
Publicado: (2023)

Influence of Gas Annealing on Sensitivity of AlN/4H-SiC-Based Temperature Sensors
por: Jung, Seung-Woo, et al.
Publicado: (2021)

Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates
por: Koryakin, Alexander A., et al.
Publicado: (2022)

Dry Wear Behaviour of the New ZK60/AlN/SiC Particle Reinforced Composites
por: Sager, Abdulmuaen, et al.
Publicado: (2022)

Competitive growth mechanisms of AlN on Si (111) by MOVPE
por: Feng, Yuxia, et al.
Publicado: (2014)

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
por: Zhang, Jin, et al.
Publicado: (2014)

The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111)
por: Wang, Wei, et al.
Publicado: (2015)

AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics
por: Sun, Wei, et al.
Publicado: (2017)

Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions
por: Cheng, Chih-Hsien, et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_ifuio37sgb221tc7inj7j996l0