Study of the Absorption of Electromagnetic Radiation by 3D, Vacuum-Packaged, Nano-Machined CMOS Transistors for Uncooled IR Sensing

There is an ongoing effort to fabricate miniature, low-cost, and sensitive thermal sensors for domestic and industrial uses. This paper presents a miniature thermal sensor (dubbed TMOS) that is fabricated in advanced CMOS FABs, where the micromachined CMOS-SOI transistor, implemented with a 130-nm technology node, acts as a sensing element. This study puts emphasis on the study of electromagnetic absorption via the vacuum-packaged TMOS and how to optimize it. The regular CMOS transistor is transformed to a high-performance sensor by the micro- or nano-machining process that releases it from the silicon substrate by wafer-level processing and vacuum packaging. Since the TMOS is processed in a CMOS-SOI FAB and is comprised of multiple thin layers that follow strict FAB design rules, the absorbed electromagnetic radiation cannot be modeled accurately and a simulation tool is required. This paper presents modeling and simulations based on the LUMERICAL software package of the vacuum-packaged TMOS. A very high absorption coefficient may be achieved by understanding the physics, as well as the role of each layer.