Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates

In this study, we applied microwave annealing (MWA) to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) without thermal damage to flexible polyimide (PI) substrates. Microwave energy is highly efficient for selective heating of materials when compared to conventional thermal anne...

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Detalles Bibliográficos
Autores principales: Park, Ki-Woong, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8157254/
https://www.ncbi.nlm.nih.gov/pubmed/34069832
http://dx.doi.org/10.3390/ma14102630

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8157254/
https://www.ncbi.nlm.nih.gov/pubmed/34069832
http://dx.doi.org/10.3390/ma14102630

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