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Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates
In this study, we applied microwave annealing (MWA) to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) without thermal damage to flexible polyimide (PI) substrates. Microwave energy is highly efficient for selective heating of materials when compared to conventional thermal anne...
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8157254/ https://www.ncbi.nlm.nih.gov/pubmed/34069832 http://dx.doi.org/10.3390/ma14102630 |
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author | Park, Ki-Woong Cho, Won-Ju |
author_facet | Park, Ki-Woong Cho, Won-Ju |
author_sort | Park, Ki-Woong |
collection | PubMed |
description | In this study, we applied microwave annealing (MWA) to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) without thermal damage to flexible polyimide (PI) substrates. Microwave energy is highly efficient for selective heating of materials when compared to conventional thermal annealing (CTA). We applied MWA and CTA to a-IGZO TFTs on PI substrate to evaluate the thermal damage to the substrates. While the PI substrate did not suffer thermal damage even at a high power in MWA, it suffered severe damage at high temperatures in CTA. Moreover, a-IGZO TFTs were prepared by MWA at 600 W for 2 min, whereas the same process using CTA required 30 min at a temperature of 300 °C, which is a maximum process condition in CTA without thermal damage to the PI substrate. Hence, MWA TFTs have superior electrical performance when compared to CTA TFTs, because traps/defects are effectively eliminated. Through instability evaluation, it was found that MWA TFTs were more stable than CTA TFTs against gate bias stress at various temperatures. Moreover, an MWA TFT-constructed resistive load inverter exhibited better static and dynamic characteristics than the CTA TFT-constructed one. Therefore, MWA is a promising thermal process with efficient energy conversion that allows the fabrication of high-performance electronic devices. |
format | Online Article Text |
id | pubmed-8157254 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-81572542021-05-28 Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates Park, Ki-Woong Cho, Won-Ju Materials (Basel) Article In this study, we applied microwave annealing (MWA) to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) without thermal damage to flexible polyimide (PI) substrates. Microwave energy is highly efficient for selective heating of materials when compared to conventional thermal annealing (CTA). We applied MWA and CTA to a-IGZO TFTs on PI substrate to evaluate the thermal damage to the substrates. While the PI substrate did not suffer thermal damage even at a high power in MWA, it suffered severe damage at high temperatures in CTA. Moreover, a-IGZO TFTs were prepared by MWA at 600 W for 2 min, whereas the same process using CTA required 30 min at a temperature of 300 °C, which is a maximum process condition in CTA without thermal damage to the PI substrate. Hence, MWA TFTs have superior electrical performance when compared to CTA TFTs, because traps/defects are effectively eliminated. Through instability evaluation, it was found that MWA TFTs were more stable than CTA TFTs against gate bias stress at various temperatures. Moreover, an MWA TFT-constructed resistive load inverter exhibited better static and dynamic characteristics than the CTA TFT-constructed one. Therefore, MWA is a promising thermal process with efficient energy conversion that allows the fabrication of high-performance electronic devices. MDPI 2021-05-18 /pmc/articles/PMC8157254/ /pubmed/34069832 http://dx.doi.org/10.3390/ma14102630 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Park, Ki-Woong Cho, Won-Ju Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates |
title | Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates |
title_full | Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates |
title_fullStr | Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates |
title_full_unstemmed | Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates |
title_short | Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates |
title_sort | thermal damage-free microwave annealing with efficient energy conversion for fabricating of high-performance a-igzo thin-film transistors on flexible substrates |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8157254/ https://www.ncbi.nlm.nih.gov/pubmed/34069832 http://dx.doi.org/10.3390/ma14102630 |
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