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Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology

In this paper, a novel method to achieve all-GaN integrated MIS-HEMTs in a Si-CMOS platform by self-terminated and self-alignment process is reported. Furthermore, a process of repairing interface defects by supercritical technology is proposed to suppress the threshold voltage shift of all GaN inte...

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Detalles Bibliográficos
Autores principales: Liu, Meihua, Yang, Yang, Chang, Changkuan, Li, Lei, Jin, Yufeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8157587/
https://www.ncbi.nlm.nih.gov/pubmed/34069925
http://dx.doi.org/10.3390/mi12050572