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Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology
In this paper, a novel method to achieve all-GaN integrated MIS-HEMTs in a Si-CMOS platform by self-terminated and self-alignment process is reported. Furthermore, a process of repairing interface defects by supercritical technology is proposed to suppress the threshold voltage shift of all GaN inte...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8157587/ https://www.ncbi.nlm.nih.gov/pubmed/34069925 http://dx.doi.org/10.3390/mi12050572 |