Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides

[Image: see text] Structural defects vary the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to control defect type and density via materials growth or postgrowth passivation. Here, we explore a simple chemical treatment that allows on–off switc...

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Detalles Bibliográficos
Autores principales: Bretscher, Hope, Li, Zhaojun, Xiao, James, Qiu, Diana Yuan, Refaely-Abramson, Sivan, Alexander-Webber, Jack A., Tanoh, Arelo, Fan, Ye, Delport, Géraud, Williams, Cyan A., Stranks, Samuel D., Hofmann, Stephan, Neaton, Jeffrey B., Louie, Steven G., Rao, Akshay
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8158852/
https://www.ncbi.nlm.nih.gov/pubmed/33983711
http://dx.doi.org/10.1021/acsnano.1c01220

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8158852/
https://www.ncbi.nlm.nih.gov/pubmed/33983711
http://dx.doi.org/10.1021/acsnano.1c01220

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