Humidity sensor based on Gallium Nitride for real time monitoring applications

Gallium Nitride (GaN) remarkably shows high electron mobility, wide energy band gap, biocompatibility, and chemical stability. Wurtzite structure makes topmost Gallium atoms electropositive, hence high ligand binding ability especially to anions, making it usable as humidity sensor due to water self...

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Detalles Bibliográficos
Autores principales: Furqan, Chaudhry Muhammad, Khan, Muhammad Umair, Awais, Muhammad, Jiang, Fulong, Bae, Jinho, Hassan, Arshad, Kwok, Hoi-Sing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8159938/
https://www.ncbi.nlm.nih.gov/pubmed/34045509
http://dx.doi.org/10.1038/s41598-021-89956-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8159938/
https://www.ncbi.nlm.nih.gov/pubmed/34045509
http://dx.doi.org/10.1038/s41598-021-89956-0

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