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Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference
Minimizing the variation in threshold voltage (V(t)) of programmed cells is required to the extreme level for realizing multi-level-cells; as many as even 5 bits per cell recently. In this work, a recent program scheme to write the cells from the top, for instance the 170th layer, to the bottom, the...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8160891/ https://www.ncbi.nlm.nih.gov/pubmed/34065435 http://dx.doi.org/10.3390/mi12050584 |