Reversible Barrier Switching of ZnO/RuO(2) Schottky Diodes

The current-voltage characteristics of ZnO/RuO [Formula: see text] Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the b...

Descripción completa

Detalles Bibliográficos
Autores principales: Wendel, Philipp, Dietz, Dominik, Deuermeier, Jonas, Klein, Andreas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8161001/
https://www.ncbi.nlm.nih.gov/pubmed/34065310
http://dx.doi.org/10.3390/ma14102678

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8161001/
https://www.ncbi.nlm.nih.gov/pubmed/34065310
http://dx.doi.org/10.3390/ma14102678

Ejemplares similares