Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

Manganese oxide (MnO(x)) shows great potential in the areas of nano-electronics, magnetic devices and so on. Since the characteristics of precise thickness control at the atomic level and self-align lateral patterning, area-selective deposition (ASD) of the MnO(x) films can be used in some key steps...

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Detalles Bibliográficos
Autores principales: Li, Yi-Cheng, Cao, Kun, Lan, Yu-Xiao, Zhang, Jing-Ming, Gong, Miao, Wen, Yan-Wei, Shan, Bin, Chen, Rong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8161048/
https://www.ncbi.nlm.nih.gov/pubmed/34065464
http://dx.doi.org/10.3390/molecules26103056

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8161048/
https://www.ncbi.nlm.nih.gov/pubmed/34065464
http://dx.doi.org/10.3390/molecules26103056

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