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Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption
Manganese oxide (MnO(x)) shows great potential in the areas of nano-electronics, magnetic devices and so on. Since the characteristics of precise thickness control at the atomic level and self-align lateral patterning, area-selective deposition (ASD) of the MnO(x) films can be used in some key steps...
Autores principales: | Li, Yi-Cheng, Cao, Kun, Lan, Yu-Xiao, Zhang, Jing-Ming, Gong, Miao, Wen, Yan-Wei, Shan, Bin, Chen, Rong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8161048/ https://www.ncbi.nlm.nih.gov/pubmed/34065464 http://dx.doi.org/10.3390/molecules26103056 |
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