Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO(2) and TiO(2)

[Image: see text] Atomic layer deposition (ALD) can provide nanometer-thin films with excellent conformality on demanding three-dimensional (3D) substrates. This also holds for plasma-assisted ALD, provided that the loss of reactive radicals through surface recombination is sufficiently low. In this...

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Detalles Bibliográficos
Autores principales: Arts, Karsten, Deijkers, Sanne, Puurunen, Riikka L., Kessels, Wilhelmus M. M., Knoops, Harm C. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8162759/
https://www.ncbi.nlm.nih.gov/pubmed/34084261
http://dx.doi.org/10.1021/acs.jpcc.1c01505

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8162759/
https://www.ncbi.nlm.nih.gov/pubmed/34084261
http://dx.doi.org/10.1021/acs.jpcc.1c01505

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