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Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO(2) and TiO(2)

[Image: see text] Atomic layer deposition (ALD) can provide nanometer-thin films with excellent conformality on demanding three-dimensional (3D) substrates. This also holds for plasma-assisted ALD, provided that the loss of reactive radicals through surface recombination is sufficiently low. In this...

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Autores principales: Arts, Karsten, Deijkers, Sanne, Puurunen, Riikka L., Kessels, Wilhelmus M. M., Knoops, Harm C. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8162759/
https://www.ncbi.nlm.nih.gov/pubmed/34084261
http://dx.doi.org/10.1021/acs.jpcc.1c01505
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author Arts, Karsten
Deijkers, Sanne
Puurunen, Riikka L.
Kessels, Wilhelmus M. M.
Knoops, Harm C. M.
author_facet Arts, Karsten
Deijkers, Sanne
Puurunen, Riikka L.
Kessels, Wilhelmus M. M.
Knoops, Harm C. M.
author_sort Arts, Karsten
collection PubMed
description [Image: see text] Atomic layer deposition (ALD) can provide nanometer-thin films with excellent conformality on demanding three-dimensional (3D) substrates. This also holds for plasma-assisted ALD, provided that the loss of reactive radicals through surface recombination is sufficiently low. In this work, we determine the surface recombination probability r of oxygen radicals during plasma ALD of SiO(2) and TiO(2) for substrate temperatures from 100 to ∼240 °C and plasma pressures from 12 to 130 mTorr (for SiO(2)). For both processes, the determined values of r are very low, i.e., ∼10(–4) or lower, and decrease with temperature and pressure down to ∼10(–5) within the studied ranges. Accordingly, deposition on trench structures with aspect ratios (ARs) of <200 is typically not significantly limited by recombination and obtaining excellent film conformality is relatively facile. For higher AR values, e.g., approaching 1000, the plasma time needed to reach saturation increases exponentially and becomes increasingly dependent on the process conditions and the corresponding value of r. Similar dependence on process conditions can be present for plasma ALD of other materials as well, where, in certain cases, film growth is already recombination-limited for AR values of ∼10. Radical recombination data and trends as provided by this work are valuable for optimizing plasma ALD throughput and feasibility for high-AR applications and can also serve as input for modeling of radical recombination mechanisms.
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spelling pubmed-81627592021-06-01 Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO(2) and TiO(2) Arts, Karsten Deijkers, Sanne Puurunen, Riikka L. Kessels, Wilhelmus M. M. Knoops, Harm C. M. J Phys Chem C Nanomater Interfaces [Image: see text] Atomic layer deposition (ALD) can provide nanometer-thin films with excellent conformality on demanding three-dimensional (3D) substrates. This also holds for plasma-assisted ALD, provided that the loss of reactive radicals through surface recombination is sufficiently low. In this work, we determine the surface recombination probability r of oxygen radicals during plasma ALD of SiO(2) and TiO(2) for substrate temperatures from 100 to ∼240 °C and plasma pressures from 12 to 130 mTorr (for SiO(2)). For both processes, the determined values of r are very low, i.e., ∼10(–4) or lower, and decrease with temperature and pressure down to ∼10(–5) within the studied ranges. Accordingly, deposition on trench structures with aspect ratios (ARs) of <200 is typically not significantly limited by recombination and obtaining excellent film conformality is relatively facile. For higher AR values, e.g., approaching 1000, the plasma time needed to reach saturation increases exponentially and becomes increasingly dependent on the process conditions and the corresponding value of r. Similar dependence on process conditions can be present for plasma ALD of other materials as well, where, in certain cases, film growth is already recombination-limited for AR values of ∼10. Radical recombination data and trends as provided by this work are valuable for optimizing plasma ALD throughput and feasibility for high-AR applications and can also serve as input for modeling of radical recombination mechanisms. American Chemical Society 2021-04-08 2021-04-22 /pmc/articles/PMC8162759/ /pubmed/34084261 http://dx.doi.org/10.1021/acs.jpcc.1c01505 Text en © 2021 The Authors. Published by American Chemical Society Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Arts, Karsten
Deijkers, Sanne
Puurunen, Riikka L.
Kessels, Wilhelmus M. M.
Knoops, Harm C. M.
Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO(2) and TiO(2)
title Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO(2) and TiO(2)
title_full Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO(2) and TiO(2)
title_fullStr Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO(2) and TiO(2)
title_full_unstemmed Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO(2) and TiO(2)
title_short Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO(2) and TiO(2)
title_sort oxygen recombination probability data for plasma-assisted atomic layer deposition of sio(2) and tio(2)
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8162759/
https://www.ncbi.nlm.nih.gov/pubmed/34084261
http://dx.doi.org/10.1021/acs.jpcc.1c01505
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