Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

Here, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special...

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Detalles Bibliográficos
Autores principales: Yin, Jun, Liu, Lian, Zang, Yashu, Ying, Anni, Hui, Wenjie, Jiang, Shusen, Zhang, Chunquan, Yang, Tzuyi, Chueh, Yu-Lun, Li, Jing, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8167175/
https://www.ncbi.nlm.nih.gov/pubmed/34059621
http://dx.doi.org/10.1038/s41377-021-00553-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8167175/
https://www.ncbi.nlm.nih.gov/pubmed/34059621
http://dx.doi.org/10.1038/s41377-021-00553-2

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