Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-tr...

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Detalles Bibliográficos
Autores principales: Yu, Ye, Wang, Tao, Chen, Xiufang, Zhang, Lidong, Wang, Yang, Niu, Yunfei, Yu, Jiaqi, Ma, Haotian, Li, Xiaomeng, Liu, Fang, Deng, Gaoqiang, Shi, Zhifeng, Zhang, Baolin, Wang, Xinqiang, Zhang, Yuantao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8175549/
https://www.ncbi.nlm.nih.gov/pubmed/34083511
http://dx.doi.org/10.1038/s41377-021-00560-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8175549/
https://www.ncbi.nlm.nih.gov/pubmed/34083511
http://dx.doi.org/10.1038/s41377-021-00560-3

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