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Review of Recent Progress on Vertical GaN-Based PN Diodes
As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, a...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8184903/ https://www.ncbi.nlm.nih.gov/pubmed/34097144 http://dx.doi.org/10.1186/s11671-021-03554-7 |