Enhanced responsivity and detectivity of fast WSe(2) phototransistor using electrostatically tunable in-plane lateral p-n homojunction

Layered transition metal dichalcogenides have shown tremendous potential for photodetection due to their non-zero direct bandgaps, high light absorption coefficients and carrier mobilities, and ability to form atomically sharp and defect-free heterointerfaces. A critical and fundamental bottleneck i...

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Detalles Bibliográficos
Autores principales: Ghosh, Sayantan, Varghese, Abin, Thakar, Kartikey, Dhara, Sushovan, Lodha, Saurabh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8185115/
https://www.ncbi.nlm.nih.gov/pubmed/34099709
http://dx.doi.org/10.1038/s41467-021-23679-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8185115/
https://www.ncbi.nlm.nih.gov/pubmed/34099709
http://dx.doi.org/10.1038/s41467-021-23679-8

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