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Enhanced responsivity and detectivity of fast WSe(2) phototransistor using electrostatically tunable in-plane lateral p-n homojunction
Layered transition metal dichalcogenides have shown tremendous potential for photodetection due to their non-zero direct bandgaps, high light absorption coefficients and carrier mobilities, and ability to form atomically sharp and defect-free heterointerfaces. A critical and fundamental bottleneck i...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8185115/ https://www.ncbi.nlm.nih.gov/pubmed/34099709 http://dx.doi.org/10.1038/s41467-021-23679-8 |