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Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling
Three-dimensional integration with through-silicon vias (TSVs) is a promising microelectronic interconnection technology. Three-component additives are commonly used for void-free TSV filling. However, optimising the additive concentrations is an expensive process. To avoid this, a single-component...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8187486/ https://www.ncbi.nlm.nih.gov/pubmed/34103562 http://dx.doi.org/10.1038/s41598-021-91318-9 |