Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (> 2 cm(2)) of AlGaN/AlN/GaN heterostructur...

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Detalles Bibliográficos
Autores principales: Chen, Xin, Dong, Jianqi, He, Chenguang, He, Longfei, Chen, Zhitao, Li, Shuti, Zhang, Kang, Wang, Xingfu, Wang, Zhong Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8187690/
https://www.ncbi.nlm.nih.gov/pubmed/34138301
http://dx.doi.org/10.1007/s40820-021-00589-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8187690/
https://www.ncbi.nlm.nih.gov/pubmed/34138301
http://dx.doi.org/10.1007/s40820-021-00589-4

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